MULTIJUNCTION SOLAR CELLS

Commercially manufactured single junction silicon solar cells are quickly approaching the maximum PCE reached in laboratories. By stacking absorber layers of decreasing band gap on top of a silicon substrate to form a multijunction cell, a new theoretical PCE limit can be attained. Our team is looking to leverage UNSW's long standing expertise with silicon to integrate III-V semi-conductor compounds and other materials into these multijunction cells. This is an exciting area of research with multiple avenues to innovate and push the design of silicon based solar cells to bigger heights. These range from attempting to lower the amount of silicon needed as a substrate, to searching for novel materials to insolate the cell at the back contact.

The main multijunction topics currently covered are: 

  • Perovskite - Silicon Cells

  • Chalcogenide - Silicon Cells

  • III - V Compound - Silicon Cells  

 

RESEARCH GALLERY

XRD 2θ-Ω diffraction profiles of Ge/Al/Si samples

XRD 2θ-Ω diffraction profiles of Ge/Al/Si samples

Raman spectra of Ge/Al/Si samples treated by laser

Raman spectra of Ge/Al/Si samples treated by laser

Characterization of the cross-sectional structure 400 J/cm2 laser treated sample

Characterization of the cross-sectional structure 400 J/cm2 laser treated sample

Characterization of the cross-sectional structures of 100 nm Ge on 4 nm SOI sample

Characterization of the cross-sectional structures of 100 nm Ge on 4 nm SOI sample

Raman spectra and bright-field cross-sectional TEM images of 100 and 150 nm Ge on SOI after laser tr

Raman spectra and bright-field cross-sectional TEM images of 100 and 150 nm Ge on SOI after laser tr

Continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystall

Continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystall

Cross-sectional TEM images and (d) Raman spectra of Ge samples with different thicknesses

Cross-sectional TEM images and (d) Raman spectra of Ge samples with different thicknesses